Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor body

ABSTRACT

A semiconductor arrangement includes a semiconductor body and a power transistor including a source region, a drain region, a body region and a drift region arranged in the semiconductor body, a gate electrode arranged adjacent to the body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement further includes a high voltage device arranged within a well-like dielectric structure in the semiconductor body and comprising a further drift region.

TECHNICAL FIELD

Embodiments of the present invention relate to a semiconductorarrangement, in particular a semiconductor arrangement with a powertransistor and a high voltage device integrated in a commonsemiconductor body.

BACKGROUND

Power transistors, such as power MOSFETs (metal oxide semiconductorfield effect transistors) or power IGBTs (insulated gate bipolartransistors), are widely used as electronic switches for switchingelectric loads, such as motors, actors, lamps, or the like. In manyapplications, load paths of two power transistors are connected inseries between terminals for positive and negative supply potentials soas to form a half-bridge circuit, where the load is coupled to an outputof the half-bridge. In a half-bridge circuit the transistor connectedbetween output and a terminal for a negative supply potential isreferred to as low-side transistor (low side switch), while thetransistor connected between a terminal for the positive supplypotential and the output is referred to as high-side transistor(high-side switch).

A power transistor is a voltage controlled device that can be controlledby a drive signal (drive voltage) received by a control terminal, whichin a MOSFET or an IGBT is a gate terminal. While the low-side transistorcan be controlled using a drive signal that is referenced to thenegative supply potential, driving the high-side transistor requires adrive signal that is either referenced to the positive supply potentialor to the electrical potential at the output terminal, where theelectrical potential at the output terminal may vary between thenegative supply potential and the positive supply potential, dependenton the switching state of the half-bridge. For driving the high-sidetransistor and the low-side transistor it is desirable to use a controlcircuit that generates control signals referenced to the negative supplypotential. While the control signal for the low-side switch may bedirectly used for driving the low-side transistor, a level shifter maybe required for shifting a signal level of the control signal for thehigh-side transistor to a suitable signal level for driving thehigh-side transistor or to a signal level suitable to be processed by adrive circuit for the high-side transistor.

A level shifter, however, may require a high voltage device, such as afurther transistor, that has a voltage blocking capability similar tothe voltage blocking capability of the low-side transistor.

In order to reduce manufacturing costs and to reduce the size there is aneed to implement a power transistor and a high voltage device in acommon semiconductor body.

SUMMARY

A first embodiment relates to a semiconductor arrangement, including asemiconductor body, a power transistor, and a high voltage device. Thepower transistor includes a source region, a drain region, a body regionand a drift region arranged in the semiconductor body, a gate electrodearranged adjacent to the body region and dielectrically insulated fromthe body region by a gate dielectric. The high voltage device isarranged within a well-like dielectric structure in the semiconductorbody and includes a further drift region.

A second embodiment relates to a half-bridge circuit, including alow-side transistor and a high-side transistor each comprising a loadpath and a control terminal, a high-side drive circuit comprising alevel shifter with a level shifter transistor, wherein the low-sidetransistor and the level shifter transistor are integrated in a commonsemiconductor body.

A third embodiment relates to a semiconductor arrangement. Thesemiconductor arrangement includes a semiconductor body having a firstsurface, a vertical power transistor, an edge termination, and a highvoltage device. The vertical power transistor includes a source region,a drain region, a body region and a drift region arranged in thesemiconductor body, a gate electrode arranged adjacent to the bodyregion and dielectrically insulated from the body region by a gatedielectric. The edge termination is arranged in the region of the firstsurface of the semiconductor body, the edge termination defines a ringwherein at least the source region of the power transistor is arrangedinside the ring. The high voltage device includes a drift regionextending from inside the ring as defined by the edge structure tooutside the ring as defined by the edge structure. The high voltagedevice is arranged within a well-like structure including dielectricsidewalls and a bottom region of a conductivity type complementary tothe conductivity type of the drift region and adjoining the dielectricsidewalls.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description, and uponviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples will now be explained with reference to the drawings. Thedrawings serve to illustrate the basic principle, so that only aspectsnecessary for understanding the basic principle are illustrated. Thedrawings are not to scale. In the drawings the same reference charactersdenote like features.

FIG. 1 illustrates a vertical cross sectional view of a vertical powertransistor having a drift region and a drift control region integratedin a semiconductor body.

FIG. 2 illustrates a horizontal cross sectional view of thesemiconductor body according to a first embodiment.

FIG. 3 illustrates a horizontal cross sectional view of thesemiconductor body according to a second embodiment.

FIG. 4 illustrates a vertical cross sectional view through a driftregion of the power transistor in an edge region of the semiconductorbody.

FIG. 5 illustrates a vertical cross sectional view through a driftcontrol region of the power transistor in an edge region of thesemiconductor body.

FIG. 6 illustrates a vertical cross sectional view of a high voltagedevice according to a first embodiment implemented in the semiconductorbody.

FIG. 7 illustrates an electrical circuit diagram of the power transistorand a high voltage device, implemented as a transistor, integrated inthe semiconductor body.

FIG. 8 illustrates a vertical cross sectional view of a high voltagedevice according to a second embodiment implemented in the semiconductorbody.

FIG. 9 illustrates an electrical circuit diagram of the power transistorand at least one high voltage device, implemented as a diode or atransistor, integrated in the semiconductor body.

FIG. 10 illustrates an embodiment of a half-bridge circuit including alow-side transistor, a high-side transistor, a high-side drive circuitand a level-shifter transistor.

FIG. 11 illustrates the half-bridge circuit of FIG. 10 and oneembodiment of the high-side drive circuit in detail.

FIG. 12 illustrates a vertical cross sectional view of a high voltagedevice according to a third embodiment.

FIG. 13 illustrates a vertical cross sectional view of a high voltagedevice implemented as a depletion transistor.

FIG. 14 illustrates a horizontal cross sectional view of a gatestructure of the depletion transistor according to FIG. 13.

FIG. 15 illustrates a vertical cross sectional view of a high voltagedevice implemented as a MOSFET and of a resistor connected in serieswith the MOSFET.

FIG. 16 illustrates a circuit diagram of half-bridge circuit including alow-side transistor, a high-side-transistor, a level-shifter transistorand a current sense resistor implemented in a common semiconductor body.

FIG. 17 illustrates a vertical cross sectional view of a lateraldepletion transistor according to a further embodiment.

FIG. 18 illustrates a horizontal cross sectional view of the transistorof FIG. 17.

FIG. 19 illustrates a horizontal cross sectional view of the transistorof FIG. 17 according to a further embodiment.

FIG. 20 illustrates a vertical cross sectional view of the transistor ofFIG. 19.

FIG. 21 illustrates a vertical cross sectional view of a semiconductorarrangement including a vertical power transistor and a high voltagedevice according to a further embodiment.

FIG. 22 illustrates a horizontal cross sectional view of thesemiconductor arrangement of FIG. 21.

DETAILED DESCRIPTION

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part thereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top”,“bottom”, “front”, “back”, “leading”, “trailing” etc., is used withreference to the orientation of the FIGs. being described. Becausecomponents of embodiments can be positioned in a number of differentorientations, the directional terminology is used for purposes ofillustration and is in no way limiting. It is to be understood thatother embodiments may be utilized and structural or logical changes maybe made without departing from the scope of the present invention. Thefollowing detailed description, therefore, is not to be taken in alimiting sense, and the scope of the present invention is defined by theappended claims. It is to be understood that the features of the variousexemplary embodiments described herein may be combined with each other,unless specifically noted otherwise.

FIG. 1 illustrates a vertical cross sectional view of a vertical powertransistor, in particular of a vertical power MOSFET that has activesemiconductor device regions integrated in a semiconductor body 100.FIG. 1 shows a vertical cross sectional view of the semiconductor body100, which is a cross sectional view in a vertical section plane thatextends perpendicular to a first surface 101 and a second surface 102 ofthe semiconductor body 100.

Referring to FIG. 1, the MOSFET includes a drain region 11, a sourceregion 12, a body region 13 and a drift region 14. The drain and sourceregions 11, 12 are arranged distant in a current flow direction of thedevice, where the current flow direction is the vertical direction ofthe semiconductor body 100 in the present embodiment. The body region 13is arranged between the source region 12 and the drift region 14, andthe drift 14 region is arranged between the body region 13 and the drainregion 11. The drain region 11 is electrically connected to a drainterminal D1 that is only schematically illustrated in FIG. 13. Thesource region 12 and the body region 13 are electrically connected to asource electrode 17 which forms or which is connected to a sourceterminal S1.

The MOSFET further includes a gate electrode 15 which extends from thesource region 12 through the body region 13 to or into the drift region14. The gate electrode 15 is dielectrically insulated from thesemiconductor regions implemented in the semiconductor body 100 by agate dielectric 16, and is connected to a gate terminal G1. The gatedielectric 16 can be a conventional gate dielectric and includes, forexample an oxide or a nitride. In the example illustrated in FIG. 1, thegate electrode 15 is a trench electrode that is arranged in a trench ofthe semiconductor body 100 in which the MOSFET is implemented. However,this is only an example. The gate electrode 15 could also be implementedas a planar electrode (not shown) above the first surface 101 of thesemiconductor body 100.

The MOSFET can be implemented as an n-type MOSFET or as a p-type MOSFET.In an n-type MOSFET, the source region 12 and the drain region 11 aren-doped while the body region 13 is p-doped. In a p-type MOSFET, thesource region 12 and the drain region 11 are p-doped while the bodyregion 13 is n-doped. The doping concentration of the drain region 11and the source region 12 is, for example in the range of between 5 E17cm⁻³ and 1 E21 cm⁻³. The doping concentration of the body region 13 is,for example, in the range of between 1 E16 cm⁻³ and 1 E19 cm⁻³.

The MOSFET can be implemented as an enhancement (normally-off) MOSFET oras a depletion (normally-on) MOSFET. In an enhancement MOSFET, the bodyregion 13 extends to the gate dielectric 16. In a depletion MOSFET,either the body region 13 includes at least along the gate dielectric 16channel region 18 (illustrated in dashed lines) of the same conductivitytype as the source region 12 and extending along the gate dielectric 16between the source region 12 and the drift region 14, or the gatedielectric 16 includes fixed charges (positive charges in an n-typeMOSFET) that cause a conducting channel in the body region 13 when thegate-source voltage is zero.

In the type of MOSFET illustrated in FIG. 1, the drift region 14 canhave the same doping type (conductivity type) as the source region 12and the drain region 11, but could also be doped complementarily to thesource region 12 and the drain region 11, wherein at least a section ofthe drift region 14 between a vertical dielectric layer 22 which will beexplained in the following and a channel region of the MOSFET may havethe same doping type as the source region 12. The “channel region” ofthe MOSFET is a region of the body region 13 along the gate dielectric16 where the gate electrode 15 controls a conducting channel. The dopingconcentration of the drift region 14 is, for example, in the range ofbetween 1 E12 cm⁻³ and 1 E15 cm⁻³.

The MOSFET further includes a drift control region 21 that isdielectrically insulated from the drift region 14 by the verticaldielectric layer 22. The vertical dielectric layer 22 acts as a driftcontrol region dielectric. The drift control region 21 is configured togenerate a conducting channel in the drift region 14 along the driftcontrol region dielectric 22 when the MOSFET is in an on-state, so as toreduce the on-resistance of the MOSFET. The MOSFET, like a conventionalMOSFET, is in the on-state, when an electrical potential is applied tothe gate terminal G that causes a conducting channel in the body region13 between the source region 12 and the drift region 14 along the gatedielectric 16, and when an electrical voltage is applied between thedrain and the source terminals D, S. The conducting channel along thegate control region dielectric 22 is an accumulation channel when thedrift region 14 has the same doping type as the source drain regions 12,11, and is an inversion channel, when the drift region 14 is dopedcomplementarily to these regions. The doping type of the drift controlregion 21 can correspond to the doping type of the drift region 14 orcan be complementary.

The MOSFET further includes a biasing source 31 coupled to the driftcontrol region 21 via a contact electrode 23. According to oneembodiment (not illustrated) the biasing source 31 includes a rectifierelement, such as a diode, connected between the gate terminal G and thedrift control region 21. A capacitive element 32, such as a capacitor,may be coupled between the drift control region 21 and a terminal for areference potential, such as the source terminal S. Further, a rectifierelement 33, such as a diode, may be connected between the drain region11 and a drain-sided end of the drift control region 21. Optionally, therectifier element 33 is connected to a connection region 24 of the samedoping type as the source region 12, and more highly doped than thedrift control region 21.

The MOSFET may further include a semiconductor zone 25 of the samedoping type as the body region 13 or complementary to the doping type ofthe source region 12. In this case, the biasing source 31 and theoptional capacitive element 32 are connected to this semiconductor zone25 via the contact electrode 23. According to one embodiment, the dopingtype of the drift control region 21 corresponds to the doping type ofthe drift region 14.

The operating principle of the MOSFET according to FIG. 1 is nowexplained. For explanation purposes it is assumed that the MOSFET is ann-type MOSFET with an n-doped drift zone 14, and that the drift controlregion 21 has the same doping type as the drift region 14. The biasingsource 31 is configured to bias the drift control region 21 to have apositive potential relative to the electrical potential of the sourceterminal S (source potential), when the MOSFET is in the on-state. TheMOSFET is in the on-state, when the drive potential applied to the gateterminal G generates a conducting channel in the body region 13 betweenthe source region 12 and the drift region 14, and when a positivevoltage is applied between the drain and the source terminals D, S. Inthe on-state, the drift control region 21, which has a higher electricalpotential than the drift region 14, generates an accumulation channelalong the gate control region dielectric 22 in the drift region 14. Thisaccumulation channel significantly reduces the on-resistance as comparedto a MOSFET without a drift control region.

The MOSFET is in the off-state, when the channel in the body region 13is interrupted. In this case, a depletion region expands in the driftregion 14 beginning at a pn-junction between the body region 13 and thedrift region 14. The depletion region expanding in the drift region 14causes a depletion region also to expand in the drift control region 21,which, like the drift region 14, may include a monocrystallinesemiconductor material. By virtue of a depletion region expanding in thedrift region 14 and a depletion region expanding in the drift controlregion 21, a voltage across the drift control region dielectric 22 islimited. The capacitive storage element 32 serves to store electricalcharges that are required in the drift control region 21 when the MOSFETis in its on-state. The rectifier element 33 allows charge carriers thatare thermally generated in the drift control region 21 to flow to thedrain region 11. This rectifier element is connected up such that in theon-state of the MOSFET the drift control region 21 may assume a higherelectrical potential than the potential at the drain terminal, so thatthe drift control region 21 is not discharged.

In the MOSFET illustrated in FIG. 1, the drift control region 21 is notonly dielectrically insulated from the drift region 14 by the verticaldrift control region dielectric 22, but is also dielectrically insulatedfrom the drain region 11 by a horizontal dielectric layer 26. Thevertical dielectric drift control region dielectric 22 and thehorizontal dielectric layer 26 form an insulating, well-like structurein which the drift control region 21 is arranged. This dielectricstructure will be referred to as dielectric well 20 in the following.

In the embodiment illustrated in FIG. 1, one drift region 14 is arrangedbetween two drift control regions 21. A device structure with one gateelectrode 15 and the corresponding gate dielectric 16, one drift region14, one drift control region dielectric 22 and one drift control region21 can be referred to as one transistor cell. However, one may alsoconsider a structure with one source region 12, one body region 13, onedrift control region dielectric 22, one half of a drift control region21 and one half of the drift region 14 as one transistor cell. Asillustrated in dotted lines in FIG. 1, the power transistor may includea plurality of transistor cells connected in parallel. The transistorcells are connected in parallel by having their source electrodes 17connected to a common source terminal S1, by having their gateelectrodes 16 connected to a common gate terminal G1 and by having theterminals 23 of the drift control regions 21 connected to the biasingcircuit 31. The individual transistor cells have the drain region 11 incommon.

The drain region 11 can be arranged only below the lateral dielectriclayer 26 below the drift control region 21. However, according to oneembodiment (illustrated in dashed lines in FIG. 1) a section of thedrift region 11′ may also extend between two neighboring drift controlregion dielectrics 22 towards the first surface 101.

FIG. 2 illustrates a horizontal cross sectional view of thesemiconductor body 100 according to one embodiment. The cross sectionillustrated in FIG. 2 is a cross section of the drift control region 21and the drift region 14. Referring to FIG. 2, in the semiconductor body100 a plurality of dielectric wells 20 including the drift controlregion dielectric 22 and the horizontal dielectric layer 26 areintegrated, with one drift control region 21 being arranged within eachdielectric well 20. Referring to FIG. 2, the dielectric wells 20 arelongitudinal structures having a longitudinal direction extending in alateral direction of the semiconductor body 100 and, therefore,perpendicular to the section plane illustrated in FIG. 1. The individualdielectric wells 20 are arranged distant to each other in a directionperpendicular to their longitudinal directions, wherein one drift region14, at least one body region 13, at least one source region 12, a gateelectrode 15 and a gate dielectric 16 is arranged between two dielectricwells 20. In FIG. 2, these individual device regions are not shown.Reference character denotes one of the regions between two neighboringdielectric wells 20 in which these device regions are implemented.

A length I which is a dimension in the longitudinal direction, of thedielectric wells 20 is, for example, in the range of several micrometers(μm) up to several millimeters (mm). A width w of these dielectric wells20, which is a dimension in a direction perpendicular to thelongitudinal direction is, for example, in the range of between several10 nanometers (nm) up to several 10 μm, such as, e.g., between 100 nmand 20 μm, or between 500 nm and 5 μm. Although, for illustrationpurposes, only several dielectric wells 20 are illustrated in FIG. 2,the power transistor may include up to several 10,000 (10⁵) transistorcells, with each transistor cell including a dielectric well 20 with adrift control region 21.

In the embodiment illustrated in FIG. 2, the MOSFET includes a pluralityof drift control regions 21, where the individual drift control regions21 are elongated semiconductor regions that are dielectrically insulatedfrom the neighboring drift regions 14 and the drain region 11. In thehorizontal (lateral) direction the individual drift control regions 21are surrounded by one drift region 14. In other words, the individualdrift control regions 21 and the drift control region dielectric 22 areembedded in one drift region 14 in this embodiment. In this embodiment,there are a plurality of dielectric wells 20 each including sidewallsformed by the drift control regions dielectrics and a bottom formed by ahorizontal dielectric layer 26, with each of these dielectric wells 20including one drift control region 21.

FIG. 3 illustrates a horizontal cross sectional view of thesemiconductor body 100 according to a second embodiment. In thisembodiment, the MOSFET includes a plurality of drift regions 14, wherethe individual drift regions 14 are elongated semiconductor regions thatare dielectrically insulated from the neighboring drift control regions21. In the horizontal (lateral) direction the individual drift regions14 are surrounded by one drift control region 21. In other words, theindividual drift regions 14 are embedded in one drift control region 21separated from the drift regions 14 by drift control region dielectrics22 in this embodiment. A further dielectric layer 27 surrounds the driftcontrol region 21 and in the vertical direction extends to thehorizontal dielectric layer 26. In this embodiment, there is onedielectric well 20 with an outer sidewall formed by the dielectric layer27 and a bottom formed by the horizontal dielectric layer 26, and with aplurality of ring-shaped vertical dielectric layers formed by the driftcontrol region dielectrics 22 surrounding the individual drift regions14. As illustrated in FIG. 1, the drift regions 14 adjoins the drainregion 11, while the drift control region 21 is insulated from the drainregion 11 by the insulation layer 26.

A width d of these drift regions 14, which is a dimension in a directionperpendicular to the longitudinal direction is, for example, in therange of between several 10 nanometers (nm) up to several 10 μm, suchas, e.g., between 100 nm and 20 μm, or between 500 nm and 5 μm.

In the following, the wording “at least one dielectric well” denotes theplurality of dielectric wells as illustrated in FIG. 2, or the onedielectric well illustrated in FIG. 3.

Referring to FIGS. 2 and 3, the power transistor with the at least onedielectric well 20 and the active transistor regions arranged within thedielectric well 20 (see FIG. 3) or between dielectric wells 20 (see FIG.2) can be implemented such that the at least one dielectric well 20 inits longitudinal direction extends between two edge regions of thesemiconductor body 100. The wording “edge regions” of the semiconductorbody 100 denotes regions of the semiconductor body 100 close to edgesurfaces, where an edge surface of the semiconductor body 100 is asurface that borders the semiconductor body 100 in a lateral direction.In the embodiments illustrated in FIGS. 2 and 3, the at least onedielectric well 20 extends from a first edge region adjoining a firstedge surface 110 ₁ to a second edge region adjoining a second edgesurface 110 ₂.

When the power transistor is in operation and is switched off, a voltagebetween the drain terminal D1 and the source terminal S1 can be up toseveral 100V, dependent on a voltage blocking capability of the powertransistor. In the vertical direction of the semiconductor body 100,mainly the space charge region in the drift region 14 or the driftcontrol region 21 absorbs this voltage. Due to imperfections of thecrystal lattice of the semiconductor body 100 along the edge surfaces110 ₁, 110 ₂ and/or due to a basic doping concentration of thesemiconductor body 100 in the edge region 110 ₁, 110 ₂, the edgesurfaces 110 ₁, 110 ₂ may not provide an electrical isolation betweenthe second surface 102 formed by the drain region 11 and the firstsurface 101, where the source and body regions 12, 13 are arranged.Moreover, it is even desirable to keep the edge surfaces 110 ₁, 110 ₂ onthe same potential as the second surface 102 of the semiconductor body100 in order to avoid leakage currents. Thus, the voltage between thedrain terminal D1 and the source terminal S1 is also to be absorbed inthe region of the first surface 101 between the edge surfaces 110 ₁, 110₂ and those regions where the source and body regions 12, 13 arearranged between the dielectric wells 20. To accomplish this, anoptional junction termination system 40 may be arranged in and/or on thesemiconductor body 100 close to the first surface 101 and may have theform of a ring that subdivides the semiconductor body 100 in an innerregion and an outer region. According to one embodiment, the source andbody regions 12, 13 as well as the gate electrode 15 of the individualtransistor cells are arranged within the inner region of the ring-shapededge termination structure 40. The dielectric wells 20 may extendthrough the edge termination structure 40 or below the edge terminationstructure 40 into the edge region of the semiconductor body 100, wherethe edge region is arranged in the outer region as defined by the edgetermination structure 40.

FIG. 4 illustrates a vertical cross sectional view of a section of thedrift region 14 in a section plane B-B illustrated in FIG. 2. Referringto FIG. 4, the gate electrode 15 as well as the source and body regions(not illustrated in FIG. 4) do not extend to the edge region of thesemiconductor body 100, and do not even extend to an end of the at leastone the dielectric well 20 in the longitudinal direction of the driftregions 14. FIG. 4 illustrates a vertical cross sectional view of thedrift region 14, the gate electrode 15 and the gate dielectric 16 in aregion adjoining an edge region of the semiconductor body 100. In dashedlines the position of the at least one dielectric well 20, in particularthe position of a section of the horizontal dielectric layer 26 and of avertical dielectric layer forming an end of the at least one dielectricwell 20 is illustrated. The vertical dielectric layer forming the end ofthe at least one dielectric well in the longitudinal direction of thedrift region 14 is dielectric layer 22 illustrated in FIG. 2 or isdielectric layer 27 illustrated in FIG. 3. The end of the at least onedielectric well 20 towards the longitudinal end of the drift region 14will be referred to as longitudinal end of the at least one dielectricwell in the following.

As can be seen from FIG. 4, the gate electrode 15, and also the sourceregion 12 and the body region 13 (see FIG. 1, but not illustrated inFIG. 4) are arranged distant to the longitudinal end of the dielectricwell 20 and, therefore, distant to the edge region of the semiconductorbody 100. A doping concentration of a doped region between the edgesurface 110 ₁ and the gate electrode 15 may correspond to the dopingconcentration of the drift region 14. This doped region absorbs thevoltage between the edge surface 110 ₁ and the gate terminal 15, thesource region 12 and the body region 13, respectively. In theswitched-off state of the power transistor the electrical potential ofthe gate electrode 15 corresponds to the electrical potential of thesource and body regions 12, 13. In an alternative embodiment (not shown)the gate structure may include several gate electrodes (each with acorresponding gate dielectric) that are distant in the longitudinaldirection of the well 20.

Referring to FIG. 4, the edge termination structure 40 may include oneor more field plates 41 and/or 42 that are arranged above the firstsurface 101 of the semiconductor body 100 on a dielectric layer 43.According to one embodiment, a first field plate 41, which is a fieldplate arranged closer to the inner region may be electrically connectedto the gate electrode 15, the source region 12 or the body region 13 ofthe power transistor. A second field electrode 42, which is arrangedcloser to the outer region may be, for example, electrically connectedto the drain region 11 or the edge region of the semiconductor body 100.Forming the edge termination structure 40 with field electrodes, such asfield electrodes 41, 42 illustrated in FIG. 4, is only one of aplurality of different possibilities to implement the edge terminationstructures. According to further embodiments (not illustrated), the edgetermination structure 40 additionally or alternatively to the fieldelectrodes 41, 42 includes doped field rings which optionally areconnected to field plates, JTE—(junction termination extension) doping,electroactive coatings like e.g. diamond-like carbon, semi-isolatingcoatings or VLD—(Variation of Lateral Doping)-regions to name a few ofthe possible edge terminations. According to further embodiments (notshown) a combination of one or more of these edge termination means maybe used. These types of edge termination structures are commonly known,so that no further explanations are required in this regard.

FIG. 5 illustrates a vertical cross sectional view of the at least onedielectric well 20 including a drift control region 21. In thisembodiment, the rectifier element 33 that, referring to FIG. 1, isconnected between the drain region 11 and the drift control region 21 isconnected between an optional contact region 34 in the region of thefirst surface 101 and arranged in the edge region of the semiconductorbody 100, and an optional connection region 24′. The connection region24′ extends in the vertical direction of the semiconductor body 100 fromthe first surface 101 to the contact region 24 arranged at a drain-sidedend of the drift control region 21. The “drain-sided end” of the driftcontrol region 21 is the end of the drift control region facing thedrain region 11. The connection region 24′ extends along that section ofthe drift control region dielectric 22 that forms a longitudinal end ofthe dielectric well 22 from the first surface 101 to the contact region24.

The optional semiconductor zone 25 of the same conductivity type as thebody region (13 in FIG. 1) and complementary to the source region isarranged distant to the longitudinal end of the at least one dielectricwell 20 and is arranged in the inner region of the semiconductor body100 as defined by the ring-shaped edge terminal structure 40. Thecontact region 34 arranged in the edge region of the semiconductor body100 may have the same doping type as the drain region 11 or the driftregion 14 arranged in the vertical direction of the semiconductor body100 between the drain region 11 and the contact region 34. The driftcontrol region 21 may have a doping concentration corresponding to adoping concentration of the drift region 14.

Referring to FIGS. 2 and 3, besides the vertical power transistor withthe at least one drift region 14 and the at least one drift controlregion 21, at least one high voltage device is implemented in a furtherdielectric well 50 within the semiconductor body 100. The “high voltagedevice” is a semiconductor device with a voltage blocking capability ofseveral 10V or even several 100V, dependent on the specificimplementation. The voltage blocking capability of the high voltagedevice may correspond to the voltage blocking capability of the powerdevice. However, the high voltage device may be implemented to have amuch lower current bearing capability or a much higher on-resistancethan the power transistor.

In the embodiment of FIG. 2, the further dielectric well 50 may beimplemented like the dielectric wells 20 in which the drift controlregions 21 are implemented. In the embodiment of FIG. 3, the furtherdielectric well 50 is an additional well within the dielectric well 20.This additional well 50 can be ring-shaped and can be arranged around asemiconductor region 14′ connected to the drain region 11 andcorresponding to the drift regions 14. The additional dielectric well 50and/or the semiconductor region 14′ may incorporate further devicesdielectrically insulated from the main transistor. The furtherdielectric well 50 is formed by providing an additional ring-shapedvertical dielectric layer 51 around the vertical dielectric layer 22′corresponding to the drift control region dielectric 22. Thesemiconductor regions within the further dielectric well 50 are drawnwith a dotted pattern in FIGS. 2 and 3. These semiconductor regions areenclosed by the dielectric well 50 in the vertical and the horizontaldirection.

The further dielectric well 50 may be located inside the surroundingdielectric layer 27. However, this is only an example. In anotherembodiment, the further dielectric well 50 may in a lateral direction belocated outside the surrounding dielectric layer 27 as depicted by thedashed line 27′ in FIG. 2. In another embodiment, the further dielectricwell 50 may be located inside a different surrounding dielectric layerwhich does not surround the active transistor cells (not shown in FIG.2).

The further dielectric well 50 can be formed at the edge of a field oftransistor cells of the vertical power transistor. In the embodimentsillustrated in FIGS. 2 and 3, there is one further dielectric well 50,where the dielectric well 50 of FIG. 3 includes two sections 50 ₁, 50 ₂,one section on each side of the elongated semiconductor region 14′.Between the further dielectric well 50 and the neighboring dielectricwell 20 including a drift control region 21 active transistor regions,which means source and body regions 12 and 13 can be implemented.However, it is also possible to omit the source regions 12 and to onlyprovide a doped region between these dielectric wells 20, 50 thatcorresponds to the body region 13.

The high voltage device implemented in the further dielectric well 50can be implemented as a lateral power device, where any type of lateralpower device, such as a lateral power transistor, a lateral power diode,or the like, can be implemented. In an alternative embodiment aplurality of further dielectric wells 50 can be implemented containingthe same type or different types of high voltage devices.

FIG. 6 illustrates a vertical cross sectional view of the furtherdielectric well 50 in a longitudinal vertical section plane D-Dillustrated in FIGS. 2 and 3. In this embodiment, a lateral powertransistor, in particular a lateral power MOSFET, is implemented in thefurther dielectric well 50. The further dielectric well 50 includes ahorizontal dielectric layer 52 that dielectrically insulates thesemiconductor region within the dielectric well 50 from the drain region11, and a vertical dielectric layer 51 that dielectrically insulates thesemiconductor regions within the dielectric well 50 from semiconductorregions surrounding the further dielectric well 50 in lateral directionsof the semiconductor body 100. The vertical dielectric layer 51 shown inFIG. 6, forms a longitudinal end of the further dielectric well 50. Thefurther dielectric well 50 may correspond to the dielectric wells 20including drift control regions concerning the size and the thickness ofthe dielectric layers. The further dielectric well 50 can be producedusing the same process steps in which the dielectric wells 20 thatinclude the drift control regions are formed.

Referring to FIG. 6, the lateral power transistor includes a drainregion 61 and a source region 63 arranged distant to each other in alateral direction of the semiconductor body 100. The lateral powertransistor further includes a body region 64 and a drift region 62,where the body region 64 is arranged between the source region 63 andthe drift region 62. The drift region 62 may adjoin the drain region 61.The lateral power transistor further includes a gate electrode 71 thatis arranged adjacent to the body region 64 between the source region 63and the drift region 62 and that is dielectrically insulated from thesesemiconductor regions by a gate dielectric 72. In the embodimentillustrated in FIG. 6, the gate electrode 71 is a trench electrode thatis implemented in a trench extending from the first surface 101 into thesemiconductor body 100. However, this is only an example. The gateelectrode 71 could also be implemented as a planar gate electrode abovethe first surface 101. The main current flow direction of the lateraltransistor according to FIG. 6 is the lateral direction of thesemiconductor body 100, where only along the gate dielectric 72 thecurrent flows in a vertical direction of the semiconductor body 100.Like in a conventional lateral power transistor, the source region 63and the body region 64 are commonly connected to a source electrode 65,where this source electrode forms or is connected to a source terminalS2 of the lateral transistor. In FIG. 6, G2 denotes a gate terminal thatis connected to the gate electrode 71, and D2 denotes a drain terminalthat is connected to drain region 61 of the lateral transistor.

As illustrated in FIG. 6, the source and body regions 63, 64 may bearranged in the inner region of the semiconductor body 100 as defined bythe edge termination structure 40, while the drain regions 61, may bearranged in the outer region of the semiconductor body 100 but withinthe further dielectric well 50. The distance between the source region63 and the drain region 61 in the lateral direction of the semiconductorbody 100 is selected dependent on a desired voltage blocking capabilityof the lateral transistor.

FIG. 6 illustrates one lateral transistor implemented in one furtherdielectric well 50. The lateral transistor is arranged in the region ofone longitudinal end of the further dielectric well 50. In the region ofthe opposite longitudinal end of the further dielectric well 50 afurther lateral transistor (not shown) can be implemented. A further,optional vertical dielectric layer 53 (illustrated in dashed lines inFIG. 6) can be arranged between these two lateral transistors. It isalso possible to subdivide the further dielectric well 50 in thelongitudinal direction into several dielectric sub-wells, wherein atleast one of these sub-wells, namely the sub-well at one longitudinalend includes a power device, wherein in other sub-wells arranged in theinner region further devices, such as resistors or logic devices can beimplemented.

The lateral transistor can be implemented as an enhancement transistor(enhancement MOSFET) or as a depletion transistor (depletion MOSFET) andcan be implemented as an n-type or as a p-type transistor. In anenhancement transistor the body region 64 is doped complementarily tothe source region 63, the drift region 62 and the drain region 61, wherethe doping concentration of the drift region 62 is lower than the dopingconcentrations of the source region 63 and the drain region 61. In adepletion transistor the body region 64 includes a channel region 68(illustrated in dashed lines) of the same conductivity type as thesource region 63 and the drift region 62 along the gate dielectric 72.In an n-type transistor the source region 63, the drift region 62 andthe drain region 61 are n-doped, while in a p-type transistor the sourceregion 63, the drift region 62 and the drain region 61 are p-doped.

In the lateral transistor illustrated in FIG. 6, the source region 63 isarranged on a side of the gate electrode 71 facing away from the drainregion 61. Optionally, a semiconductor region 66 doped complementarilyto the drift region 62 is arranged between that side of the gateelectrode 71 facing the drain region 61 and the drift region 62. Thissemiconductor region 66 protects the gate dielectric 72 from highvoltages and/or high electric fields when the lateral transistor isblocking (is in its off-state). According to one embodiment, thesemiconductor region 66 is electrically connected to the source terminalS2 (as illustrated in dashed lines in FIG. 6). The operating principleof the lateral MOSFET according to FIG. 6 corresponds to the operatingprinciple of a conventional MOSFET. Thus, the MOSFET is in an on-statewhen there is an electrically conducting channel along the gatedielectric 72 between the source region 63 and the drift region 62. TheMOSFET is in the off-state, when there is no such conducting channelalong the gate dielectric 72. In this case, a depletion region or spacecharge region expands in the drift region 62 starting from thepn-junction between the body region 64 and the drift region 62 and thepn-junction between the semiconductor region 66 and the drift region 62.The conducting channel along the gate dielectric 72 can be controlledthrough a drive potential applied to the gate terminal G2 and the gateelectrode 71, respectively.

FIG. 7 illustrates an electrical circuit diagram of the semiconductorarrangement with the vertical power MOSFET and the lateral powertransistor explained before. The circuit diagram includes twotransistors, namely a first transistor T1 formed by the vertical powertransistor, a second transistor T2 formed by the lateral powertransistor. As illustrated in dashed lines in FIG. 7, these twotransistors T1, T2 are integrated in a common semiconductor body 100.There are six terminals available at the semiconductor body 100, namelythe drain terminal D1, the source terminal S1 and the gate terminal G1of the first transistor T1, and the drain terminal D2, the sourceterminal S2 and the gate terminal G2 of the lateral transistor T2. Justfor illustration purposes it is assumed that the two transistors T1, T2are n-type enhancement transistors.

FIG. 8 illustrates a vertical cross sectional view of the furtherdielectric well 50 in a longitudinal vertical section plane D-Dillustrated in FIGS. 2 and 3. In this alternative embodiment, a lateralpower diode is implemented in the further dielectric well 50.

Referring to FIG. 8, the lateral power diode includes a first emitter(cathode) region 91 and a second emitter (anode) region 94 that aredistant in a lateral direction of the semiconductor body 100. The maincurrent flow direction of the lateral diode according to FIG. 8 is thelateral direction of the semiconductor body 100. Like in a conventionallateral power diode, the anode region 94 is commonly connected to ananode electrode 95, where this anode electrode 95 forms or is connectedto an anode terminal A of the lateral diode. In FIG. 8, C denotes acathode terminal that is connected to cathode region 91 of the lateraldiode.

As illustrated in FIG. 8, the anode regions 94 may be arranged in theinner region of the semiconductor body 100 as defined by the edgetermination structure 40, while the cathode regions 91, may be arrangedin the outer region of the semiconductor body 100 but within the furtherdielectric well 50. The distance between the anode region 94 and thecathode region 91 in the lateral direction of the semiconductor body 100is selected dependent on a desired voltage blocking capability of thelateral diode.

In general, in the lateral MOSFET illustrated in FIG. 6 and in thelateral diode illustrated in FIG. 8, the drift region extends frominside the ring as defined by the edge termination to outside the ringas defined by the edge termination, or at least the dielectric wellextends from inside the ring as defined by the edge termination tooutside the ring as defined by the edge termination. This concept is, ofcourse, not restricted to be applied in a MOSFET or a diode but may beapplied to other types of power devices including a drift region aswell.

FIG. 8 illustrates one lateral diode implemented in one furtherdielectric well 50. The lateral diode is arranged in the region of onelongitudinal end of the further dielectric well. In the region of theopposite longitudinal end of the further dielectric well 50 a furtherlateral diode (not shown) or a lateral transistor can be implemented. Afurther, optional vertical dielectric layer 53 (illustrated in dashedlines in FIG. 8) can be arranged between these two lateral diodes orbetween the lateral diode and the lateral transistor.

FIG. 9 illustrates an electrical circuit diagram of the semiconductorarrangement with the vertical power MOSFET, and the lateral power diodeD explained before. The circuit diagram includes a first transistor T1formed by the vertical power transistor, and a diode formed by thelateral power diode. As illustrated in dashed lines in FIG. 9, thetransistor T1 and the diode D are integrated in a common semiconductorbody 100. There are five terminals available at the semiconductor body100, namely the drain terminal D1, the source terminal S1 and the gateterminal G1 of the first transistor T1, and the anode terminal A, thecathode terminal C of the lateral Diode D. Just for illustrationpurposes it is assumed that the transistor T1 is an n-type enhancementtransistor.

Optionally, not only the first transistor T1 and the diode D, but alsothe second transistor T2 is integrated in the semiconductor body 100.The circuit symbol of this second transistor T2 is also illustrated inFIG. 9. The second transistor T2 can be implemented as a lateraltransistor as illustrated in FIG. 6. The second transistor T2 and thediode D can be arranged in one further dielectric wells on oppositelongitudinal ends or can be arranged in two separate further dielectricwells 50. There are eight terminals at the semiconductor body 100 inthis embodiment, namely the drain terminal D1, the source terminal S1and the gate terminal G1 of the first transistor T1, the drain terminalD2, the source terminal S2 and the gate terminal G2 of the secondtransistor T2, and the anode terminal A and the cathode terminal C ofthe lateral Diode D.

FIG. 10 illustrates a first embodiment of an application circuit inwhich the two transistors T1, T2 and the diode D integrated in thesemiconductor body 100 are implemented. The circuit according to FIG. 10is a half-bridge circuit with a low-side transistor which is formed bythe first transistor T1, a high-side transistor T3, and a high-sidedrive circuit 220 including a level-shifter with a level-shiftertransistor and including a bootstrap diode. The level-shifter transistoris formed by the second transistor T2. The bootstrap diode is formed bythe lateral power diode D. In the embodiment illustrated in FIG. 10, thehigh-side transistor T3 and the low-side transistor T1 are bothimplemented as n-type enhancement MOSFETs. However, this is only anexample. These two transistors could also be implemented as p-typeMOSFETs or as complementary MOSFETs. The high-side transistor T3 and thelow-side transistor T1 each have a load path that is formed by thedrain-source paths of the MOSFETs and a control terminal that is formedby the gate terminal of the individual MOSFETs. In the embodimentillustrated in FIG. 10, the level-shifter transistor T2 is alsoimplemented as an n-type enhancement MOSFET. However, this is only anexample. The level-shifter transistor could be implemented as any typeof transistor that can be integrated in the further dielectric well 50.

The load paths of the high-side transistor T3 and the low-sidetransistor T1 are connected in series between terminals for a positivesupply potential +V_(DC) and a negative supply potential or a referencepotential GND, respectively. A circuit node that is common to load pathsof the high-side transistor T3 and the low-side transistor T1 forms anoutput OUT of the half-bridge circuit.

The half-bridge circuit further includes a control circuit 210 thatreceives a first input signal S_(LS) and a second input signal S_(HS).The first input signal S_(LS) defines a desired switching state of thelow-side switch T1, and the second input signal S_(HS) defines a desiredswitching state of the high-side transistor T3. The control circuit 210is configured to generate a first drive signal S_(DRV1) from the firstinput signal S_(LS) and a second drive signal S_(DRV2) from the secondinput signal S_(HS). Alternatively and not shown in FIG. 11 the firstdrive signal S_(DRV1) and the second drive signal S_(DRV2) may begenerated out of only one single input signal, for example by using theinverted input signal and adding certain delay times to prevent low-sideswitch T1 and high-side switch T3 to be in conduction mode at the sametime. While the first drive signal S_(DRV1) is directly received at thegate terminal of the low side transistor T1, a level-shifting of thesignal level of the second drive signal S_(DRV2) is required in order todrive the high-side transistor T3. The first and second drive signalsS_(DRV1), S_(DRV2) may be signals that are referenced to the referencepotential GND. While the low-side transistor T1 can be switched on anoff using the first drive signal S_(DRV1) referenced to the referencepotential GND, a third drive signal S_(DRV3) that is referenced to theelectrical potential at the output terminal OUT of the half-bridgecircuit is required for switching on and off the high-side transistorT3. This drive signal S_(DRV3) is generated by the high-side drivecircuit 220 using the level-shifter transistor T2 that is connectedbetween the high-side drive circuit 220 and the reference potential GND.The level-shifter transistor T2 receives the second drive signalS_(DRV2). The high-side drive circuit 220 is configured to evaluate aswitching state of a level-shifter transistor T2 and to generate thethird drive signal S_(DRV3) dependent on the detected switching state ofthe level-shifter transistor T2. When, for example, the level-shiftertransistor T2 is switched on through the second drive signal S_(DRV2),the high-side drive circuit 220 generates the third drive signalS_(DRV3) so as to switch on the high-side transistor T3. The voltageblocking capability of the level-shifter transistor T2 is about thevoltage blocking capability of the low-side transistor T1, becausedependent on the switching state of the half-bridge circuit, the voltageacross the load path of the level-shifter transistor T2 is about thesame as the voltage across the load path of the low-side transistor T1.

Diode D may, for example, be used as a bootstrap diode to generate asupply voltage of the high-side drive circuit 220 from the supplyvoltage S_(Supp) of the low-side drive circuit 210. When transistor T1is in the on-state, the reference potential of the high-side drivecircuit 220 and of the high-side transistor T3 is close to the referencepotential GND. Lateral power diode D therefore may be in forwardoperation and charging an energy storage (see, e.g., capacitive storageelement 222 in FIG. 11) of high-side driving circuit 220. Whentransistor T1 is in off-state the reference potential of the high-sidedrive circuit 220 and of the high-side transistor T3 is close to thepositive supply potential +V_(DC), for example. In this operation state,the lateral diode D prevents the energy storage of the high-side circuit220 from being discharged and thus ensures the operation of high-sidecircuit 220.

FIG. 11 illustrates the half-bridge circuit according to FIG. 10,wherein an embodiment of the high-side drive circuit 220 is illustratedin greater detail. In this embodiment, the high-side drive circuit 220includes a drive unit 221 with supply terminals connected to an energystorage element 222 which is shown here as a capacitor, an outputterminal coupled to the gate terminal of the high-side transistor T3,and an input terminal. Optionally, a gate resistor 224 is connectedbetween the output of the drive unit 221 and the gate terminal of thehigh-side transistor T3. A first one of the supply terminals of thedrive unit 221 is connected to a positive supply terminal of the energystorage element 222, while a second supply terminal is connected to anegative supply terminal of the energy storage element 222 and to theoutput OUT of the half-bridge circuit. Thus, the electrical potential atthe first supply terminal of the drive unit 221 corresponds to theelectrical potential of the output terminal OUT plus the supply voltageprovided by the energy storage element 222. The energy storage element222 may be charged by the bootstrap diode D as explained before.

However, the energy storage element 222 may also be another voltagesource that can be employed in a high-side drive circuit. In this case,the bootstrap diode D can be omitted or can be used for other purposesin the circuit.

An impedance 223, such as a resistor, is connected between the firstsupply terminal and the input terminal of the drive unit 221 and isconnected in series with the load path of the level-shifter transistorT2, where the series circuit with the impedance 223 and thelevel-shifter transistor T2 is connected between the positive supplyterminal of the energy storage element 222 and reference potential GND.The drive unit 221 is configured to evaluate a voltage across theimpedance 223 and to generate the third drive signal S_(DRV3) dependenton the detected voltage across the impedance 223, where this voltage isdependent on the switching state of the level-shifter transistor T2.Alternatively and not shown in FIG. 11, an additional impedance may beplaced between impedance 223 and terminal D2 of the level-shiftertransistor T2 to reduce e.g. current values and power losses.

The operating principle of the half-bridge circuit according to FIG. 11is now explained. For explanation purposes it is assumed that both, thelow-side transistor T1 and the high-side transistor T3 are switched offand that in a next step switching on of the high-side transistor T3 isdesired. It is further assumed, that the electrical potential at theoutput OUT is somewhere between the reference potential GND and thepositive supply potential +V_(DC). This potential at the output OUT isdependent on the characteristic of a load (not illustrated) connected tothe output OUT and may, e.g. during turn-off of transistor T1 evenexceed the positive supply potential +V_(DC). Just for explanationpurposes it is assumed that the electrical potential at the output OUTis about 50% of the positive supply potential +V_(DC). The supplypotential +V_(DC) is, for example, in the range of between 300V and600V.

When the level-shifter transistor T2 is switched off, the voltage acrossthe impedance 223 is zero, and the voltage across the level-shiftertransistor T2 corresponds to the electrical potential at the output OUTplus the supply voltage of the energy storage element 222. Thus, avoltage blocking capability of the level-shifter transistor T2 isrequired that is at least the voltage blocking capability of thelow-side transistor T1.

When the second drive signal S_(DRV2) switches the level-shiftertransistor T2 on, a current flows through the impedance 223, so that thevoltage across the impedance 223 increases, where the electricalpotential and the input of the drive unit 221 may even fall below theelectrical potential at the output terminal OUT. According to oneembodiment, the drive unit 221 includes a protection circuit thatprevents the electrical potential at the input of the drive unit 221 tosignificantly drop below the electrical potential at the output OUT.According to one embodiment, a diode or an Avalanche or Zener diode(illustrated in dotted lines) or an arrangement with a plurality ofdiodes and/or Avalanche or Zener diodes connected in series can beconnected between the second supply terminal and the input terminal. Thedrive unit 221 may either evaluate the voltage across the impedance 223or may detect a decrease of the electrical potential at the inputterminal to below the electrical potential at the output OUT (not shownin FIG. 11), which is the electrical potential at the second supplyterminal of the drive unit 221. According to one embodiment, the driveunit 221 generates a signal level of the drive signal S_(DRV3) thatswitches the high-side transistor T3 on when the electrical potential atthe input terminal of the drive unit 221 falls below the electricalpotential at the second supply terminal of the drive unit 221.

Besides a high voltage blocking capability, the level-shifter transistorT2 may also have a high on-resistance, so as to prevent thelevel-shifter transistor T2 from discharging the energy storage element222 and from changing the electrical potential at the output terminalOUT.

FIG. 12 illustrates a further embodiment of a lateral power transistorimplemented in the further dielectric well 50. The power transistoraccording to FIG. 12 is based on the power transistor illustrated inFIG. 6. In the power transistor according to FIG. 12, the semiconductorregion 66 that protects the gate electrode 71 from high voltages andwhich can drain leakage currents is electrically connected to the sourceterminal S1 of the vertical power transistor. Optionally, the transistorincludes a further semiconductor region 67 doped equal to thesemiconductor region 66, arranged in the drift region 62 in the regionof the body region 64 and also connected to the source terminal S1 ofthe vertical power transistor. The semiconductor region 67 can alsoserve to drain a leakage current to a power terminal (in this case thesource terminal S1). A leakage current may be thermally generated in thedrift region 62 during blocking operation of the lateral powertransistor and to prevent this leakage current to reach a drivercircuit.

FIG. 13 illustrates a further embodiment of a lateral power transistorimplemented in the dielectric well 50. This power transistor isimplemented as a depletion transistor and has a source region 63arranged between two gate electrodes 71 or between two sections of onegate electrode 71. The at least one gate electrode 71 is arranged in atrench extending into the semiconductor body 100 from the first surface101. A section of the drift region 62 extends to the source region 63between these two gate electrodes 71 or gate electrode sections,respectively. The gate electrode 71 or gate electrode sections aredielectrically insulated from the semiconductor body 100 by gatedielectrics 72.

FIG. 14 illustrates a horizontal cross sectional view of the powertransistor of FIG. 13 in the region of the at least one gate electrode71 and the source region 63. In the embodiment illustrated in FIG. 14,the source region 63 is arranged between two gate electrodes 71 eachdielectrically insulated from the semiconductor body 100 by a gatedielectric 72. According to a further embodiment (not shown) there is aring-shaped gate electrode 71, wherein the source region 63 is arrangedwithin this ring. Between the two gate electrodes 71 or the two gateelectrode sections, respectively, at least one semiconductor region 69of a doping type complementary to the doping type of the source region63 is arranged. This at least one region 69 is arranged distant to thesource region 63, so that a section of the drift region 62 is arrangedbetween the source region 63 and the semiconductor region 69.

The operating principle of the lateral depletion transistor illustratedin FIG. 13 is as follows: for explanation purposes it is assumed that adepletion transistor is an n-type transistor in which the source region63, the drain region 61 and drift region 62 are n-doped, while the atleast one semiconductor region 69 is p-doped. The at least one gateelectrode 71 is electrically connected to a terminal for a referencepotential, such as the source terminal S1 of the vertical powertransistor. The MOSFET switches off, when the electrical potential atthe source terminal S2 of the lateral transistor increases above theelectrical potential of the gate electrode 71 so that the section of thedrift region 62 arranged between the gate electrodes 71 is depleted fromcharge carriers. An increase of the electrical potential at the sourceterminal S2 of the lateral power transistor may, for example, occur whenthe lateral transistor is used to charge a capacitor connected betweenthe source terminal S2 of the lateral transistor and the terminal forthe reference potential, such as the source terminal S1 of the verticalpower transistor. Such a capacitor is illustrated in dashed lines inFIG. 13. According to one embodiment, the capacitor is the capacitor 32as illustrated in FIG. 1.

According to another embodiment, the capacitor is the energy storageelement 222 of FIG. 11. According to another embodiment the capacitor 32as illustrated in FIG. 1 and the energy storage element 222 asillustrated in FIG. 11 are implemented by one and the same capacitivestorage element or are implemented by two capacitive storage elementsconnected in parallel. In order to prevent this capacitor from beingdischarged through the lateral transistor, a rectifier element, such asa diode, which is also illustrated in FIG. 13, is connected between thesource terminal S2 of the lateral power transistor and the capacitor.The lateral depletion transistor of FIG. 13 hence forms an alternativeto a bootstrap diode or to another voltage source to deliver a supplypower to the high-side driver of a half bridge arrangement of powertransistors.

The lateral transistor illustrated in FIG. 14, further includes twosemiconductor regions 69 doped complementarily to the drain region 11and adjoining the gate dielectrics 72 on sides facing away from thechannel region. These semiconductor regions may also be connected to thesource terminal S1 of the vertical power transistor.

The at least one semiconductor region 69 illustrated in FIG. 14 servesto prevent the accumulation of minority charge carriers along the gatedielectric 72. This semiconductor region 69 is, for example, alsoconnected to the source terminal S1 of the vertical power transistor.

The channel region may have the same doping concentration as the driftregion 62, but may also have a doping concentration different from thedoping concentration of the drift region 62. The doping concentration ofthe channel region is one of the parameters influencing the pinch-offvoltage of the depletion transistor.

FIG. 15 illustrates a further embodiment of implementing a powersemiconductor device in the further dielectric well 50. In thisembodiment, besides a lateral power transistor a resistor 80 isintegrated in the further dielectric well 50. Alternatively, the lateralpower transistor and the resistor 80 are integrated in two differentfurther dielectric wells 50. The lateral power transistor according toFIG. 15 corresponds to the power transistor according to FIG. 6.However, this is only an example. Any other type of lateral powertransistor may be implemented as well. The region of the dielectric well50 in which the resistor 80 is implemented is dielectrically insulatedfrom the lateral power transistor by a further vertical dielectric layer53. The resistor 80 includes first doped semiconductor region 81 havinga doping concentration of, for example, between 10¹¹ and 10¹⁶ cm⁻³ andtwo higher doped contact regions 82, 83 arranged distant to other in alateral direction. The doping types of the individual semiconductorregions 81, 82, 83 are identical. One of the contact regions, namely thesecond contact region 83 in the embodiment as illustrated, is connectedto the source terminal S2 of the lateral power transistor, so that theresistor 80 is connected in series with load path of the lateral powertransistor.

The application of the electronic circuit with the vertical powertransistor T1, the lateral power transistor T2 and the resistor 80connected in series with the load path of the lateral power transistorT2 is illustrated in FIG. 16. The electronic circuit illustrated in FIG.13 is based on the half-bridge circuit illustrated in FIG. 7 with thedifference that the resistor 80 is connected in series with the loadpath of the level-shifter transistor T2. The resistor 80 is connected tothe control circuit 210. In this embodiment, the control circuit 210 isconfigured to evaluate a voltage drop V80 across the resistor 80. Thisvoltage drop V80 is dependent on a temperature of the resistor 80. Sincethe resistor 80 is integrated in same semiconductor body 100 as thelow-side transistor T1, the temperature of the resistor 80 correspondsto the temperature of the low-side transistor T1.

In an alternative embodiment (not shown in FIG. 16) one or bothterminals of the resistor 80 may be directly connected to the controlcircuit 210 without a connection to the lateral power transistor T2 orhaving e.g. a common ground potential with the lateral power transistorT2. In this case the current flowing through the resistor 80 must begenerated by the control circuit 210 to get the temperature dependentvoltage drop V80.

FIG. 17 illustrates a vertical cross sectional view of a lateral powertransistor according to a further embodiment implemented in the furtherdielectric well 50. Like the lateral power transistors illustrated inFIGS. 13 to 14, the lateral power transistor according to FIG. 17 isimplemented as a depletion transistor. In the depletion transistor ofFIG. 17 like features as in the transistors according to FIGS. 13 to 14have the same reference characters.

Referring to FIG. 17, the lateral transistor includes a drain region 61and a source region 63 that are distant in the lateral direction of thesemiconductor body 100 and within the dielectric well 50. A drift regionextends between the drain region 61 and the source region 63. The driftregion has the same conductivity type as the drain region 61 and thesource region 63, has a lower doping concentration than the source anddrain regions 63, 61 and may have two drift region sections, namely afirst drift region section 62′ adjoining the source region 63, and anoptional second drift region section 62″ adjoining the first driftregion section 62′ and the drain region 61. The doping concentration ofthe first drift region section 62′ is, for example, between 10¹³ cm⁻³and 10¹⁷ cm⁻³.

The source and drain regions 63, 61, the drift region 62′, 62″ and thesemiconductor region 73 explained below are embedded in a semiconductorregion 60 having a basic doping of the same doping type as the sourceand drain regions 63, 61 but with a lower doping concentration. Thissemiconductor region 60 corresponds to the drift region 62 in theembodiments explained before. The doping concentration of the seconddrift region section 62″ may correspond to the doping concentration ofthe region 60 with the basic doping, while the doping concentration ofthe first drift region section 62′ is higher than the dopingconcentration of the region 60 with the basic doping.

The doping concentration of the drain and source regions 61, 63 is, forexample, between 1 E19 cm⁻³ and 1 E21 cm⁻³. The first drift regionsection 62′ is, e.g., an implantation region having a doping dose ofabout 1 E12 cm⁻².

The drain region 61, the source region 63 and the drift region 62′, 62″are n-doped in an n-type depletion transistor and are p-doped in ap-type depletion transistor.

The depletion transistor of FIG. 17 includes two control structures forcontrolling a conducting channel in the drift region 62′, 62″,specifically in the first drift region section 62′, between the sourceregion 63 and the drain region 61. A first control structure includes agate electrode 71 above the first drift region section 62′ anddielectrically insulated from the first drift region section 62′ by agate dielectric 72. The second control structure includes a dopedsemiconductor region 73 of a conductivity type complementary to theconductivity type of the drift region 62′, 62″. The semiconductor region73 will be referred to as base region in the following. The base region73 is located below the first drift region 62′ and opposite the gateelectrode 71, so that there is a section of the first drift regionsection 62′ that is between the gate electrode 71 and the base region73. The base region 73 is connected to a first gate terminal G2 to whichthe gate electrode 71 is connected to, or can be connected to a separategate terminal G3. In the embodiment illustrated in FIG. 17, in thelateral direction of the semiconductor body 100 the base region 73extends as far in the direction of the drain region 61 as the firstdrift region section 62′. A distance between the first drift regionsection 62′ and the drain region 61 in the lateral direction is definedby the second drift region section 62″. This distance may be between 0,when the second drift region section 62″ is omitted, and several 10 μm.The length of the first drift region section 62′ is the dimension of thedrift region 62′ in the lateral direction between the source region 63and the drain region 61.

As illustrated in FIG. 17, the drift region 62′ is located below an edgetermination structure 40 with at least one field electrode 42. Referringto FIG. 17, the at least one field electrode 42 can be connected to thegate electrode 71. Optionally, the base region 73 has a higher dopedregion 73 ₂ adjoining the drift region 62′ below the gate electrode 71and a lower doped region 73 ₁ adjoining the higher doped region 73 ₂.The higher doped region 73 ₂ may extend as far in the direction of thedrain region 61, or may be shorter. According to one embodiment, thehigher doped region 73 ₂ extends as far in the direction of the drainregion 61 as the gate dielectric 72, and extending farther in thedirection of the drain region 61 than the higher doped region 73 ₂. Adopant dose of the lower doped region 73 ₁ is, e.g., about 1.0 E12 cm⁻²while the dopant dose of the higher doped region 73 ₂ is, e.g., about 5E12 cm⁻². The lower doped region 73 ₁ extends deeper into thesemiconductor body 100 than the higher doped region 73 ₂. For example,the lower doped region 73 ₁ and the higher doped region 73 ₂ are regionsthat have been formed by ion implantation, where an implantation energyof the (deeper) lower doped region 73 ₁ is higher, e.g., 3 MeV, than animplantation energy of the higher doped region 73 ₂. The implantationenergy of the higher doped region 73 ₂ is, e.g., between 1 MeV and 2MeV.

In the transistor of FIG. 17, there is a conducting channel in the driftregion between the source region 63 and the drain region 61 when thevoltages between gate terminals G2, G3 and the source terminal S2 iszero. When the absolute values of these voltages increase, so that thevoltages become negative in an n-type transistor or become positive in ap-type transistor, the conducting channel is pinched by two effects: adepletion region expanding from the pn-junction between the base region73 and the drift region 62′; and a depletion region generated below thegate electrode 71. The transistor of FIG. 17 can be used and can beinterconnected in the same way as the transistors of FIGS. 13 to 14,e.g., for charging a capacitive storage element.

FIG. 18 illustrates a horizontal cross sectional view of the depletiontransistor of FIG. 17. Referring to FIG. 18, there could be one sourceregion 63, or there could be several source regions 63 (illustrated indashed lines), where the several source regions are distant in adirection perpendicular to the current flow direction. The “current flowdirection” is the direction in which the source and drain regions 63, 61are distant.

FIG. 19 illustrates a horizontal cross sectional view of the depletiontransistor of FIG. 17 according to a further embodiment. In thetransistor of FIG. 19, the drift region 62′ includes a fin-likesemiconductor region adjacent the source region 63 and between twodistant trenches, where in each of these trenches an additional gateelectrode 75 is integrated that is dielectrically insulated from thedrift region by a further gate dielectric 76. The additional gateelectrodes 75 are connected to the first or second gate terminals G2,G3. In the transistor of FIG. 19, the additional gate electrodes 75additionally to the gate electrode 71 (see FIG. 17) and additionally tothe base region 73 serves to control a conducting channel in thefin-like region and, therefore serve to switch the depletion transistoron and off. According to one embodiment, the transistor only includesthe gate electrodes 75 in the trenches, so that the gate electrode 71above the drift region is omitted. In a semiconductor device withseveral source regions 63, two gate electrodes 75 are adjacent eachsection of the drift region 62′ adjoining one source region 63.

FIG. 20 illustrates a vertical cross sectional view of the transistor ofFIG. 19 in the region of the semiconductor fin. Referring to FIG. 20,the semiconductor fin between the gate electrodes 75 includes a sectionof the drift region 62′ and a section of the base region 73, whereaccording to one embodiment, the higher doped region 73 ₂ does notextend to below the trenches with gate electrodes 75, while the lowerdoped region 73 ₁ surrounds the gate electrodes 75 and the gatedielectrics outside the semiconductor fin.

FIG. 21 illustrates a vertical cross sectional view of a semiconductorarrangement with a vertical power transistor and a high voltage deviceaccording to a further embodiment. In this embodiment, the verticalpower transistor 10 is implemented as a vertical power MOSFET andincludes a plurality of transistor cells connected in parallel. Eachtransistor cell includes a source region 12, a body region 13 a driftregion 14 and a drain region 11, wherein the drift region 14 and thedrain region 11 are common to the individual transistor cells (areshared by the individual transistor cells). Each transistor cell furtherincludes a gate electrode 15 arranged adjacent the body region 13 anddielectrically insulated from the body region 13 by a gate dielectric16. The gate electrodes 15 are arranged in trenches in the embodimentillustrated in FIG. 21. However, this is only an example. Other gatetopologies, such as planar gates could be implemented as well. In thevertical power transistor of FIG. 21 the same device regions as in thevertical power transistor of FIG. 1 have the same reference numerals.

Referring to FIG. 21, a high voltage device is integrated in thesemiconductor body 100. In this embodiment, the high voltage device isimplemented as a lateral MOSFET corresponding to the lateral MOSFETillustrated in FIG. 6. However, this is only an example. Instead of aMOSFET another type of lateral power device, such as a lateral powerdiode illustrated in FIG. 8 could be implemented as well. Unlike thelateral MOSFET of FIG. 6 or the lateral diode of FIG. 8, the lateralpower device of FIG. 21 is arranged within a well-like structureincluding dielectric sidewalls 201 and a semiconductor bottom region 202(buried region) adjoining the sidewalls 201. The bottom region 202 has aconductivity type complementary to the conductivity type of the driftregion 62 of the lateral power device. The dielectric sidewalls 201encircle the drift region 62 and may include a conventional dielectricmaterial such as, e.g. an oxide, a nitride, or the like. The buriedbottom region 202 may be electrically connected to the source terminalS2, which is illustrated in dashed lines in FIG. 21.

The vertical power transistor includes an edge termination 40 thatcorresponds to the edge termination 40 explained herein before. Thedrift region 62 of the lateral power device is located below the edgetermination 40 and extends from inside a ring as defined by the edgetermination 40 to outside the ring as defined by the edge termination40, so that in the embodiment of FIG. 21 the source region 63 of thelateral MOSFET is inside the ring, while the drain region 61 is outsidethe ring. This corresponds to the relationship between the drift region62 of the lateral MOSFET of FIG. 6 and the edge termination 40 of FIG.6. In an embodiment in which the high voltage device is implemented as alateral diode, one of the anode regions and the cathode regions islocated inside the ring, while the other one of the anode region and thecathode region is located outside the ring.

FIG. 22 illustrates a horizontal cross sectional view of thesemiconductor arrangement of FIG. 21. FIG. 22 schematically illustratesthe semiconductor body 100 with the edge termination 40 and thedielectric sidewalls 201 of the well-like structure. Reference numeral10 denotes a region in which the transistor cells of the vertical powertransistor are integrated. As can be seen from FIG. 22, the well-likestructure extends from inside the ring as defined by the edgetermination 40 to outside the ring as defined by the edge termination40.

Referring to what is illustrated in dashed and dotted lines in FIG. 22,several well-like structures can be provided in the semiconductor body100, where different lateral power devices can be integrated in thesewell-like structures.

Spatially relative terms such as “under”, “below”, “lower”, “over”,“upper” and the like, are used for ease of description to explain thepositioning of one element relative to a second element. These terms areintended to encompass different orientations of the device in additionto different orientations than those depicted in the figures. Further,terms such as “first”, “second”, and the like, are also used to describevarious elements, regions, sections, etc. and are also not intended tobe limiting. Like terms refer to like elements throughout thedescription.

As used herein, the terms “having”, “containing”, “including”,“comprising” and the like are open ended terms that indicate thepresence of stated elements or features, but do not preclude additionalelements or features. The articles “a”, “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

With the above range of variations and applications in mind, it shouldbe understood that the present invention is not limited by the foregoingdescription, nor is it limited by the accompanying drawings. Instead,the present invention is limited only by the following claims and theirlegal equivalents.

What is claimed is:
 1. A semiconductor arrangement, comprising: asemiconductor body; a power transistor comprising a source region, adrain region, a body region and a drift region arranged in thesemiconductor body, a gate electrode arranged adjacent to the bodyregion and dielectrically insulated from the body region by a gatedielectric; an edge termination structure that subdivides thesemiconductor body into in an inner region and an outer region, at leastthe source region of the power transistor being arranged within theinner region; and a high voltage device arranged within a well-likedielectric structure in the semiconductor body and comprising a furtherdrift region, the drift region of the high voltage device extending fromthe inner region as defined by the edge termination structure to theouter region as defined by the edge termination structure.
 2. Thesemiconductor arrangement of claim 1, wherein the power transistorfurther comprises a drift control region arranged adjacent to the driftregion and dielectrically insulated from the drift region by a driftcontrol region dielectric.
 3. The semiconductor arrangement of claim 1,wherein the source and drain regions of the power transistor arearranged distant in a vertical direction of the semiconductor body. 4.The semiconductor arrangement of claim 2, wherein a lateral dielectriclayer is arranged between the drift control region and the drain region.5. The semiconductor body of claim 4, wherein the drift control regionhas a drain-sided end, and wherein a rectifier element is connectedbetween the drain region and the drain-sided end of the drift controlregion.
 6. The semiconductor body of claim 5, wherein the drift controlregion at the drain-sided end includes a contact region of the samedoping type as the drift control region but more highly doped, andwherein the rectifier element is connected to the contact region.
 7. Thesemiconductor arrangement of claim 1, wherein the high voltage device isimplemented as a MOSFET, comprising: a further source region, a furtherdrain region and a channel region arranged between the further sourceregion and the further drift region; and a further gate electrodearranged adjacent to the further channel region and dielectricallyinsulated from the channel region by a further gate dielectric.
 8. Thesemiconductor arrangement of claim 7, wherein the MOSFET is implementedas an enhancement MOSFET, and wherein the channel region has a dopingtype complementary to the doping type of the source region.
 9. Thesemiconductor arrangement of claim 7, wherein the MOSFET is implementedas a depletion MOSFET, and wherein the channel region at least along thegate dielectric has a doped region with a doping type corresponding tothe doping type of the source region.
 10. The semiconductor arrangementof claim 1, wherein the high voltage device is a lateral high voltagedevice.
 11. The semiconductor body of claim 10, wherein the powertransistor is implemented as a vertical power transistor, wherein theedge termination structure defines a ring, and wherein at least thesource region of the power transistor is arranged inside the ring. 12.The semiconductor arrangement of claim 11, wherein the drift region ofthe lateral high voltage device extends from inside the ring as definedby the edge structure to outside the ring as defined by the edgestructure.
 13. The semiconductor arrangement of claim 1, wherein thehigh voltage device is implemented as a diode.
 14. The semiconductorarrangement of claim 13, wherein the diode is a lateral diode in which afirst emitter region and a second emitter region are distant in alateral direction of the semiconductor body.
 15. The semiconductorarrangement of claim 2, further comprising: a biasing circuit coupled tothe drift control region; and a capacitive element coupled between thedrift control region and a terminal for a reference potential.
 16. Thesemiconductor arrangement of claim 15, wherein the terminal for thereference potential is the source region.
 17. A semiconductorarrangement, comprising: a semiconductor body having a first surface; avertical power transistor comprising a source region, a drain region, abody region and a drift region arranged in the semiconductor body, agate electrode arranged adjacent to the body region and dielectricallyinsulated from the body region by a gate dielectric; an edge terminationarranged in the region of the first surface of the semiconductor body,the edge termination defining a ring wherein at least the source regionof the power transistor is arranged inside the ring; and a high voltagedevice including a drift region extending from inside the ring asdefined by the edge structure to outside the ring as defined by the edgestructure, wherein the high voltage device is arranged within awell-like structure including dielectric sidewalls and at least one of abottom region of a conductivity type complementary to the conductivitytype of the drift region and a dielectric bottom region adjoining thedielectric sidewalls.
 18. The semiconductor arrangement of claim 17,wherein the high voltage device is implemented as a lateral transistor.19. The semiconductor arrangement of claim 17, wherein the high voltagedevice is implemented as a lateral diode.